CTU Events

Contacts in Nanoscale and Contacts for Nanomaterials

07 Apr 2026   13:00-13:45

Scaling contacts remains one of the most critical challenges in nano complementary metal-oxide-semiconductor (CMOS) technology. As device dimensions shrink into the nanometer regime, issues such as surface roughness, reduced contact size, limited film thickness, and the use of undoped substrates become increasingly significant. These factors increase contact resistance and introduce variability and nonlinearity in the current–voltage characteristics, potentially limiting the benefits of further CMOS miniaturization. This talk will examine these challenges and explore potential solutions for next-generation nano CMOS technologies. In the second part of this talk, attention will shift to the emerging field of ohmic contacts in two-dimensional (2D) materials. Key difficulties—including restricted doping levels, limited metal selection for band alignment, elevated Fermi-level pinning, and the impact of van der Waals gaps—will be analyzed. Strategies for improving ohmic contact performance, such as 2D/metal van der Waals contacts, hybrid contact structures, junction doping, phase and bandgap engineering, and buffer layers, will be highlighted. Finally, the validity of the Schottky contact model in 2D material/high-k/silicon heterostructures will be critically evaluated.

Place

FEL ČVUT v Praze, kat. mikroelektroniky, T2:B2-s141k

Online event URL

https://ieee.cz/ieee-distinguished-lecture/

Organizer

Katedra mikroelektroniky FEL ČVUT v Praze

Contact person

Ing. Adam Bouřa, Ph.D., bouraa@fel.cvut.cz, +420224352335

More information

https://ieee.cz/ieee-distinguished-lecture/