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Prof. Martin Stutzmann - Photocatalysis with GaN
22.02.2016 16:30-17:30
Gallium Nitride (GaN) is a wide-bandgap semiconductor that has received increasing attention not only as a material for blue light LED but also as a potential component in advanced organic/inorganic hybrid systems. Controllable alignment of charge-transfer levels in GaN can be employed for (bio)chemical sensors as well as for photocatalytic cleavage of organic molecules on the surface. On the other hand, GaN photoelectrodes decorated with Pt nanoparticles exhibit enhanced stability in aqueous electrolytes. Conductance, surface potential, and other measurements are combined to identify and understand the main processes involved in the photogenerated charge transfer processes at and close to the GaN surface.
- Místo konání
- T2:D3-309
- Kontaktní osoba
- Bohuslav Rezek , rezekboh@fel.cvut.cz, + 420 2 2435 2330
- Podrobnější informace
- http://www.wsi.tum.de/People/Profile/tabid/287/Default.aspx?id=ef2357b3-3ffc-45d7-aeb2-a5872bf87623